Boron Sputtering Target
Boron Sputtering Target Description
The sputtering process is mainly to deposit a thin film of ultra-high-purity sputtered metal or oxide material onto another solid substrate, and control the removal and conversion of the target material into a directed gas/plasma phase by ion bombardment. Boron is a low-abundance element in the solar system and the earth's crust. It is a weak conductor at room temperature and a good conductor at high temperature. Boron Sputtering Target has excellent physical and chemical properties, high melting point, smallest average grain size, high temperature corrosion resistance, good durability, good electrical conductivity and high cost performance. It is a chemical vapor deposition (CVD) and physical vapor deposition (PVD) ) process of excellent preparation materials. Boron Sputtering Targets are widely used, mainly in nuclear industry, glass coating industry, electronic information industry, chemical industry, biomedicine, aerospace industry, high-end decorative products and metal smelting industry, etc.
Boron Sputtering Target Specifications:
Material |
Boron(B) |
Technique |
Hot isostatic pressing,Grain refinement,Sintering,Forging,Annealing |
Purity |
99-99.99% |
Size |
Discs,Plate,Step ( Dia ≤480mm,Thickness ≥ 1mm) Tube( Diameter< 300mm,Thickness >2mm) |
Density |
2.34g/cm3 |
Melting Point |
2300 °C |
Boiling Point |
2550 °C |
Shape |
Discs, Plates, Column Targets, Step Targets, Custom-made |
Surface |
Polished,Alkali Cleaning,Grinding,Black Oxide, etc. |
Certification |
ISO9001 |
Boron Sputtering Target Pictures:
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