Tungsten Heavy Alloy Implant Part
Tungsten Heavy Alloy Implant Part Description
Semiconductor ion implantation technology is a kind of high technology of material surface modification, which has been widely used in the doping of semiconductor materials and the surface modification of metals, ceramics, polymers, etc., and has become an indispensable means of contemporary large-scale integrated circuit manufacturing. Tungsten Heavy Alloy Implant Part is generally made of tungsten alloy after sintering, forging, rolling and machining. It has the advantages of high density, good mechanical properties, strong corrosion resistance, high tensile strength, strong heat shock resistance, good wear resistance, non-toxic, environmental protection and long service life. Tungsten Heavy Alloy Implant Part can maintain the ejection direction of ion beam, increase the durability of the component, and realize the purpose of changing the conductivity of semiconductor devices and transistor structure. Tungsten Heavy Alloy Implant Part can be used to manufacture various semiconductor devices, such as transistors, integrated circuits, microelectronic devices, solar cells and so on.
Tungsten Heavy Alloy Implant Part Specifications:
|
Grade |
WMo,WNiFe |
|
Technique |
Rolling,Forging,Flattening,Annealing,Machining |
|
Melting Point |
3410℃ |
|
Purity |
≥95% |
|
Size and Shape |
According to drawings |
|
Maximum Outside Diameter |
800mm |
|
Density |
19.3g/cm3 |
|
Surface |
Polishing,Chemical Cleaning,Powder coating, etc. |
|
Standard |
ASTM B777,DIN,GB,ISO,JIS |
|
Certification |
ISO9001 |
Tungsten Heavy Alloy Implant Part Pictures:


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