Tungsten Ion Implantation Part
Tungsten Ion Implantation Part Description
Ion implantation is a new technology of material surface modification, which can optimize the surface properties of materials or obtain some new excellent properties, and plays an important role in semiconductor and integrated circuit manufacturing. Because tungsten material has the advantages of high density, high melting point, stable high temperature chemical properties, small thermal denaturation, good thermal conductivity and long service life, it has become the first choice for ion sources and consumables for ion implanters in the semiconductor industry. Tungsten Ion Implantation Part is usually made by powder metallurgy technology, and generally includes shielding cylinder of emission cathode, emission panel, center fixed rod, and filament plate in arc initiation chamber. Tungsten Ion Implantation Part can be widely used in aerospace, scientific experiments, metal processing, high temperature furnace, sapphire refining industry and ceramic industry.
Tungsten Ion Implantation Part Specifications:
|
Grade |
W1,W2 |
|
Technique |
Rolling,Forging,Flattening,Annealing,Machining |
|
Melting Point |
3410℃ |
|
Purity |
≥99.95% |
|
Size and Shape |
According to drawings |
|
Maximum Outside Diameter |
800mm |
|
Density |
19.3g/cm3 |
|
Surface |
Polishing,Chemical Cleaning,Powder coating, etc. |
|
Standard |
ASTM B777,DIN,GB,ISO,JIS |
|
Certification |
ISO9001 |
Tungsten Ion Implantation Part Pictures:


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