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Azo High Purity Alumina Doped Zinc Oxide Sputtering Target

Azo High Purity Alumina Doped Zinc Oxide Sputtering Target

With the development of transparent conductive films, AZO (Al2O3-ZnO) targets, which can replace ITO, have been widely used. The AZO transparent conductive film has a band gap of 3.4eV and an intrinsic absorption limit of 360nm, which can be used as a window layer material for thin-film batteries.
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Product Details of Azo High Purity Alumina Doped Zinc Oxide Sputtering Target

Product Introduction

It is necessary to go beyond geographical restrictions, focus on the global market, adjust the strategic layout, while stabilizing the domestic competitive position, go to the world, actively participate in the market competition in the international Molybdenum Ion Implant Parts, Beryllium Copper Tube, High Purity Zirconium Foil manufacturing field, and create a new level of growth. We deeply realize that the quality of products directly related to the company's economic efficiency and sustainable development, thus always maintain high standards of product quality. Thanks to the strong support of people from all walks of life, the company's performance has been booming since its establishment, and it has won a good reputation and reputation among domestic and foreign counterparts. We actively carry out education and training that combines the personal growth of employees with the growth of the company.

Aluminum Zinc Oxide Sputtering Targets

Description:

Aluminum zinc oxide(AZO)sputtering target,that is,aluminum-doped zinc oxide target,contains three elements of Al,Zn and O,and is a transparent conductive oxide.The main production process is as follows:using high-quality ZnO and Al2O3 powder,then hot pressing,sintering,and finally bonding it to the bottom plate.Aluminum Zinc Oxide Sputtering Targets manufactured by the hot pressing method has the advantages of low resistivity,high wear resistance,high density, uniform microstructure,fine grain size,and smooth surface.

Application:

Sputtering is an established technique capable of depositing thin films from a wide variety of materials to different substrate shapes and sizes.Aluminum Zinc Oxide Sputtering Targets are often used for thin film deposition, and the preparation of AZO thin films can be performed by radio frequency or DC magnetron sputtering.Because Aluminum Zinc Oxide films have high transmittance and low resistivity in the visible region,and are inexpensive and non-toxic,they are widely used in solar cells,glass coatings (architectural glass and automotive glass),thin film and photovoltaic industry,electronic displays (such as Flat panel displays),LED,and photoelectric are particularly popular and can replace many of the functions of ITO.

Aluminum Zinc Oxide Sputtering Targets With the development of transparent conductive films, AZO (Al2O3-ZnO) targets, which can replace ITO, have been widely used. The AZO transparent conductive film has a band gap of 3.4eV and an intrinsic absorption limit of 360nm, which can be used as a window layer material for thin-film batteries. Its wide band gap feature can reduce the absorption of light by p, n-type doped regions and improve the utilization rate of light energy. At the same time, the AZO transparent conductive film has low resistivity and high visible light transmittance, making it a good front transparent layer material. At the same time, AZO also has the characteristics of high plasma stability, easy preparation technology, and non-toxic and harmless raw materials, making AZO more widely used in the field of thin-film solar cells.


Aluminum Zinc Oxide Sputtering Targets Picture:

Our company can provide customers with high-purity, high-density, and uniformly organized AZO targets, as well as the binding service of AZO targets and backplanes.

Type

Product Name

Formula

Purity

Melting Point

Density (g/cc)

Available Shapes

Oxides

Aluminium Oxide

Al2O3

4N

2045

4

Target, Particle

Bismuth(III) Oxide

Bi2O3

4N

820

8.9

Target, Particle

Chromium(III) Oxide

Cr2O3

4N

2435

5.2

Target, Particle

Erbium Oxide

Er2O3

4N

2378

8.64

Target, Particle

Hafnium Oxide

HfO2

4N

2812

9.7

Target, Particle

Indium Tin Oxide

ITO

4N

1565

7.6

Target

Magnesium Oxide

MgO

4N

2800

3.58

Target, Particle

Niobium Pentoxide

Nb2O5

4N

1530

4.47

Target, Particle

Neodymium(III) Oxide

Nd2O3

4N

2272

7.2

Target, Particle

Nickel Oxide

NiO

4N

1990

7.45

Target, Particle

Scandium Oxide

Sc2O3

4N

2480

3.86

Target, Particle

Silicon Oxide

SiO

4N

1702

2.13

Target, Particle

Silicon Dioxide

SiO2

4N

1610

2.2

Target, Particle, Crystal

Samarium(III) Oxide

Sm2O3

4N

2350

7.4

Target, Particle

Tantalum Pentoxide

Ta2O5

4N

1800

8.7

Target, Particle

Titanium Dioxide

TiO2

4N

1800

4.29

Target, Particle

Titanium (V) Oxide

Ti3O5

4N

1750

4.57

Target, Particle

Vanadium(V) Oxide

V2O5

4N

690

3.36

Target, Particle

Yttrium(III) Oxide

Y2O3

4N

2680

4.8

Target, Particle

Zinc Oxide

ZnO

4N

1975

5.6

Target, Particle

Aluminium-doped Zinc Oxide

AZO

4N

\

5.4

Target

Zirconium Dioxide

ZrO2

4N

2700

5.5

Target, Particle

Fluoride

Barium Fluoride

BaF2

4N

1280

4.8

Target, Particle

Calcium Fluoride

CaF2

4N

1360

3.13

Target, Particle

Cerium Fluoride

CeF3

4N

1418

6.16

Target, Particle

Potassium Fluoride

KF

4N

880

2.48

Target, Particle

Lanthanum(III) Fluoride

LaF3

4N

1490

6

Target, Particle

Magnesium Fluoride

MgF2

4N

1266

4.2

Target, Particle

Sodium Fluoride

NaF

4N

988

2.79

Target, Particle

Others

Barium Titanate

BaTiO3

4N

1620

3.96

Target, Particle

Strontium Titanate

SrTiO3

4N

2080

5.12

Target, Particle

Zinc Sulfide

ZnS

4N

1830

4.1

Target, Particle

Silicon Nitride

Si3N4

4N

sublimation

3.44

Target, Particle

Titanium Nitride

TiN

4N

2950

5.43

Target, Particle

Aluminium Nitride

AlN

4N

sublimation

3.26

Target, Particle

Boron Nitride

BN

4N

3000

2.25

Target, Particle

Slilicon Carbide

SiC

4N

2700

3.22

Target


We increase the value of the Azo High Purity Alumina Doped Zinc Oxide Sputtering Target by improving the technology, which enables us to achieve greater profits. The company's products have a complete after-sales service system, which has the function of collecting, organizing, analyzing and judging the storage of information from various parties, so that both domestic and foreign customers can get quality service from this system in time. With top quality, excellent service and good reputation, we continue to carry out business reforms and management innovations, and dedicated to improving market competitiveness for our customers.

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