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Aluminum Zinc Oxide Sputtering Targets

Description:

Aluminum zinc oxide（AZO）sputtering target,that is,aluminum-doped zinc oxide target,contains three elements of Al,Zn and O,and is a transparent conductive oxide.The main production process is as follows:using high-quality ZnO and Al2O3 powder,then hot pressing,sintering,and finally bonding it to the bottom plate.Aluminum Zinc Oxide Sputtering Targets manufactured by the hot pressing method has the advantages of low resistivity,high wear resistance,high density, uniform microstructure,fine grain size,and smooth surface.

Application:

Sputtering is an established technique capable of depositing thin films from a wide variety of materials to different substrate shapes and sizes.Aluminum Zinc Oxide Sputtering Targets are often used for thin film deposition, and the preparation of AZO thin films can be performed by radio frequency or DC magnetron sputtering.Because Aluminum Zinc Oxide films have high transmittance and low resistivity in the visible region,and are inexpensive and non-toxic,they are widely used in solar cells,glass coatings (architectural glass and automotive glass),thin film and photovoltaic industry,electronic displays (such as Flat panel displays),LED,and photoelectric are particularly popular and can replace many of the functions of ITO.

Aluminum Zinc Oxide Sputtering Targets With the development of transparent conductive films, AZO (Al2O3-ZnO) targets, which can replace ITO, have been widely used. The AZO transparent conductive film has a band gap of 3.4eV and an intrinsic absorption limit of 360nm, which can be used as a window layer material for thin-film batteries. Its wide band gap feature can reduce the absorption of light by p, n-type doped regions and improve the utilization rate of light energy. At the same time, the AZO transparent conductive film has low resistivity and high visible light transmittance, making it a good front transparent layer material. At the same time, AZO also has the characteristics of high plasma stability, easy preparation technology, and non-toxic and harmless raw materials, making AZO more widely used in the field of thin-film solar cells.

Aluminum Zinc Oxide Sputtering Targets Picture:

Aluminum Zinc Oxide Sputtering Targets

AZO Sputtering Target

Our company can provide customers with high-purity, high-density, and uniformly organized AZO targets, as well as the binding service of AZO targets and backplanes.

Type	Product Name	Formula	Purity	Melting Point	Density (g/cc)	Available Shapes
Oxides	Aluminium Oxide	Al2O3	4N	2045	4	Target, Particle
	Bismuth(III) Oxide	Bi2O3	4N	820	8.9	Target, Particle
	Chromium(III) Oxide	Cr2O3	4N	2435	5.2	Target, Particle
	Erbium Oxide	Er2O3	4N	2378	8.64	Target, Particle
	Hafnium Oxide	HfO2	4N	2812	9.7	Target, Particle
	Indium Tin Oxide	ITO	4N	1565	7.6	Target
	Magnesium Oxide	MgO	4N	2800	3.58	Target, Particle
	Niobium Pentoxide	Nb2O5	4N	1530	4.47	Target, Particle
	Neodymium(III) Oxide	Nd2O3	4N	2272	7.2	Target, Particle
	Nickel Oxide	NiO	4N	1990	7.45	Target, Particle
	Scandium Oxide	Sc2O3	4N	2480	3.86	Target, Particle
	Silicon Oxide	SiO	4N	1702	2.13	Target, Particle
	Silicon Dioxide	SiO2	4N	1610	2.2	Target, Particle, Crystal
	Samarium(III) Oxide	Sm2O3	4N	2350	7.4	Target, Particle
	Tantalum Pentoxide	Ta2O5	4N	1800	8.7	Target, Particle
	Titanium Dioxide	TiO2	4N	1800	4.29	Target, Particle
	Titanium (V) Oxide	Ti3O5	4N	1750	4.57	Target, Particle
	Vanadium(V) Oxide	V2O5	4N	690	3.36	Target, Particle
	Yttrium(III) Oxide	Y2O3	4N	2680	4.8	Target, Particle
	Zinc Oxide	ZnO	4N	1975	5.6	Target, Particle
	Aluminium-doped Zinc Oxide	AZO	4N	\	5.4	Target
	Zirconium Dioxide	ZrO2	4N	2700	5.5	Target, Particle
Fluoride	Barium Fluoride	BaF2	4N	1280	4.8	Target, Particle
	Calcium Fluoride	CaF2	4N	1360	3.13	Target, Particle
	Cerium Fluoride	CeF3	4N	1418	6.16	Target, Particle
	Potassium Fluoride	KF	4N	880	2.48	Target, Particle
	Lanthanum(III) Fluoride	LaF3	4N	1490	6	Target, Particle
	Magnesium Fluoride	MgF2	4N	1266	4.2	Target, Particle
	Sodium Fluoride	NaF	4N	988	2.79	Target, Particle
Others	Barium Titanate	BaTiO3	4N	1620	3.96	Target, Particle
	Strontium Titanate	SrTiO3	4N	2080	5.12	Target, Particle
	Zinc Sulfide	ZnS	4N	1830	4.1	Target, Particle
	Silicon Nitride	Si3N4	4N	sublimation	3.44	Target, Particle
	Titanium Nitride	TiN	4N	2950	5.43	Target, Particle
	Aluminium Nitride	AlN	4N	sublimation	3.26	Target, Particle
	Boron Nitride	BN	4N	3000	2.25	Target, Particle
	Slilicon Carbide	SiC	4N	2700	3.22	Target

Through a long-term development, our ACETRON 4N 99.99% High Purity Si Planar Sputtering Target for Vacuum/PVD Coating has being the best-selling in domestic and abroad obtained numerous of merchants'approvals and faith. Our work philosophy is, honest and pragmatic, pioneering and innovative, courageous and responsible, results-oriented. We further innovate and develop, develop steadily, and are committed to building a leading company in the country.

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